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| 型号 | MBT35200MT1G |
| 厂商 | ON Semiconductor |
| 描述 | TRANS SW PNP BIPOL 35V 2A 6TSOP |
| MBT35200MT1G PDF |  |
| 代理商 | MBT35200MT1G |
| 产品变化通告 | Wire Change 08/Jun/2009 |
| 标准包装 | 1 |
| 晶体管类型 | PNP |
| 电流 - 集电极 (Ic)（最大） | 2A |
| 电压 - 集电极发射极击穿（最大） | 35V |
| Ib、Ic条件下的Vce饱和度（最大） | 310mV @ 20mA，2A |
| 电流 - 集电极截止（最大） | 100nA |
| 在某 Ic、Vce 时的最小直流电流增益 (hFE) | 100 @ 1.5A，1.5V |
| 功率 - 最大 | 625mW |
| 频率 - 转换 | 100MHz |
| 安装类型 | 表面贴装 |
| 封装/外壳 | SC-74，SOT-457 |
| 供应商设备封装 | 6-TSOP |
| 包装 | 剪切带 (CT) |
| 其它名称 | MBT35200MT1GOSCT |
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